Diverse Quantization Phenomena in Layered Materials [electronic resource].

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Cover; Half Title; Title Page; Copyright Page; Contents; Preface; Authors; Chapter 1: Introduction; CONTENTS; References; Chapter 2: Experimental Measurements on Magnetic Quantization; CONTENTS; 2.1. Scanning Tunneling Spectroscopy; 2.2. Magneto-Optical Spectroscopies; 2.3. Quantum Transport Apparatus, and Differential Thermal Calorimeter/Laser Flash Analysis; 2.4. Electron Energy Loss Spectroscopy and Light Inelastic Scatterings; References; Chapter 3: Theoretical Models; CONTENTS; 3.1. The Generalized Tight-Binding Models for Typical Layered Systems; 3.2. Magneto-Optical Excitation Theory

3.3. Transport Theories3.3.1. Quantum Hall Effects; 3.3.2. Magneto-Heat Capacity; 3.4. Modified Random-Phase Approximation for Magneto-Electronic Coulomb Excitations; References; Chapter 4: Twisted Bilayer Graphene Systems; CONTENTS; 4.1. Electronic Properties in the Absence/Presence of Gate Voltages; 4.2. Optical Absorption Spectra; 4.3. Magnetically Quantized Landau Levels from the Moire Superlattice; 4.4. Significant Differences Between Twisted and Sliding Systems; References; Chapter 5: Stacking-Configuration-Modulated Bilayer Graphene; CONTENTS

5.1. Electronic Properties and Absorption Spectra5.2. Significant Landau subbands; References; Chapter 6: AA-Bottom-Top Bilayer Silicene Systems; CONTENTS; 6.1. Essential Electronic and Optical Properties; 6.2. Diverse Characteristics of Magneto-Electronic States; References; Chapter 7: AB-Bottom-Top Bilayer Silicene; CONTENTS; 7.1. Rich Electronic and Optical Properties Under an Electric Field; 7.2. Unusual Magneto-Electronic States; 7.3. Unique Magneto-Absorption Spectra; References; Chapter 8: Si-Doped Graphene Systems; CONTENTS; 8.1. Guest-Atom-Diversified Electronic Properties

8.2. Four Kinds of Landau Levels and Magneto-Optical Selection RulesReferences; Chapter 9: Unusual Quantum Transport Properties; CONTENTS; 9.1. Sliding Bilayer Graphenes; 9.2. AAA-, ABA-, ABC-, and AAB-Stacked Trilayer Graphenes; 9.3. Heat Capacity of Monolayer Graphene; References; Chapter 10: Rich Magneto-Coulomb Excitations in Germanene; CONTENTS; 10.1. Doping- and Gate-Voltage-Enriched Single-Particle and Collective Excitations; 10.2. Magnetoplasmons with Significant Landau Dampings; References

Chapter 11: Topological Characterization of Landau Levels for 2D Massless Dirac Fermions in 3D Layered SystemsCONTENTS; 11.1. Some Topological Aspects; 11.2. Chiral Symmetry Protected Nodal-Line Topological Semimetals; 11.3. Time Reversal Symmetry Protected 3D Strong Topological Insulators; References; Chapter 12: Concluding Remarks; CONTENTS; References; Chapter 13: Future Perspectives and Open Issues; CONTENTS; References; Index

This monograph offers a comprehensive overview of diverse quantization phenomena in layered materials, covering current mainstream experimental and theoretical research studies, and presenting essential properties of layered materials along with a wealth of figures. This book illustrates commonly used synthesis methods of these 2D materials and compares the calculated results and experimental measurements, including novel features not yet reported. The book also discusses experimental measurements of magnetic quantization, theoretical modeling for studying systems and covers diversified magneto-electronic properties, magneto-optical selection rules, unusual quantum Hall conductivities, and single- and many-particle magneto-Coulomb excitations. Rich and unique behaviors are clearly revealed in few-layer graphene systems with distinct stacking configuration, stacking-modulated structures, silicon-doped lattices, bilayer silicene/germanene systems with the bottom-top and bottom-bottom buckling structures, monolayer and bilayer phosphorene systems, and quantum topological insulators. The generalized tight-binding model, the static and dynamic Kubo formulas, and the random-phase approximation are developed/modified to thoroughly explore the fundamental properties and propose the concise physical pictures. Different high-resolution experimental measurements are discussed in detail, and they are consistent with the theoretical predictions. Aimed at readers working in materials science, physics, and engineering this book should be useful for potential applications in energy storage, electronic devices, and optoelectronic devices.

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